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GaAs nanowires

Single GaAs/AlAs nanowire in magnetic field

It is now possible to grow using molecular beam epitaxy (MBE) defect free GaAs/AlAs core/shell nanowires (NWs) with optical properties approaching those of the best optical quality MBE grown GaAs. In contrast to 3D GaAs, core/shell NWs give bright emission at room temperature opening the way for numerous optoelectronic applications. Furthermore, the NWs can be grown with GaAs in the zinc-blende or wurzite phase, the latter phase being unique to NWs.

Magnetic field, which couples to both the orbital and the spin degree of freedom, can be used to investigate the fascinating physics of confined one dimensional excitons. The diamagnetic shift gives information on the extent of the exciton wave function and the associated orbital quantum number. Alternatively, the coupling to the spin degree of freedom leads to a Zeeman splitting of the exciton lines at high field giving information concerning the electron and hole g-factors and many body interactions.

Fig.1 Typical emission spectra from single GaAs/AlAs nanowire

See online : For more details please see Plochocka et al. Nano Letters, 13, 2442, (2013)